(China (Mainland))
Product Summary
The BLF177 is a Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads of BLF177 are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook General section for further information. The applications of the BLF177 include industrial and military applications in the HF/VHF frequency range.
Parametrics
BLF177 absolute maximum ratings: (1)drain-source voltage: 125 V; (2)gate-source voltage: ±20 V; (3)drain current (DC): 16 A; (4)total power dissipation: 220 W at Tmb ≤ 25 ℃ ; (5)storage temperature: -65 to 150 ℃; (6)junction temperature: 200 ℃.
Features
BLF177 features: (1)High power gain; (2)Low intermodulation figure; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BLF177 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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BLF177,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 150W HF-VHF |
Data Sheet |
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BLF177C |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
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BLF177C,112 |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
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BLF177CR |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
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BLF177CR,112 |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
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