Product Summary

The AO4458 is a N-Channel Enhancement Mode Field Effect Transistor. The AO4458 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. The AO4458 is ESD protected and it is suitable for use as a load switch or in PWM applications.

Parametrics

AO4458 absolute maximum ratings: (1)Gate-Source Voltage, VGS: ±20V; (2)Drain-Source Voltage, VDS: 30V; (3)Power Dissipation, PD: ; (4)Junction and Storage Temperature Range, Tj, Tstg: -55 to 150℃; (5)Repetitive avalanche energy L=0.3mH, EAR: 375mJ; (6)Pulsed Drain Current, IDM: 80A; (7)Avalanche Current, IAR: 50A.

Features

AO4458 features: (1)VDS (V) = 30V; (2)ID = 20A VGS = 10V); (3)RDS(ON) < 4.6mΩ (VGS = 10V); (4)RDS(ON) < 6.4mΩ (VGS = 4.5V).

Diagrams

AO4458 circuit diagram

AO4401
AO4401
Other

Data Sheet
Negotiable 
AO4402
AO4402

MOSFET N-CH 20V 20A 8SOIC
Data Sheet
0-3000: $0.23
AO4403
AO4403

MOSFET P-CH -30V -6.1A 8-SOIC
Data Sheet
0-1: $0.39
1-25: $0.27
25-100: $0.23
100-250: $0.20
250-500: $0.17
500-1000: $0.13
AO4404
AO4404
Other

Data Sheet
Negotiable 
AO4404B
AO4404B

MOSFET N-CH 30V 8.5A 8-SOIC
Data Sheet
0-1: $0.32
1-25: $0.23
25-100: $0.20
100-250: $0.17
250-500: $0.15
500-1000: $0.11
AO4405
AO4405
Other

Data Sheet
Negotiable