(China (Mainland))
Product Summary
The AO4606 is a 30V complementary MOSFET. The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Parametrics
AO4606 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30V; (2)Gate-Source Voltage, VGS: ±20V; (3)Pulsed Drain Current, IDM: 30V; (4)Avalanche Current, IAS, IAR: 10A; (5)Junction and Storage Temperature Range, TJ, TSTG: -55 to 150℃.
Features
AO4606 features: (1)Body Diode Reverse Recovery Time 15 to 18ns when IF=-6.5A, dI/dt=100A/ms.; (2)Body Diode Reverse Recovery Charge 9.7 to 11.6nC when IF=-6.5A, dI/dt=100A/ms; (3)Gate resistance 1.5 to 5Ω when VGS=0V, VDS=0V, f=1MHz.
Diagrams
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 AO4606 |
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Data Sheet |
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AO4606 |
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Data Sheet |
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AO4607 |
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Data Sheet |
Negotiable |
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AO4609 |
Other |
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Negotiable |
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AO4610 |
Other |
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Data Sheet |
Negotiable |
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AO4629 |
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MOSFET N/P-CH 30V 6/5.5A 8SOIC |
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AO4614B |
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MOSFET DUAL P+N CH 40V 5A SOIC8 |
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