Product Summary
The AO4413 is a P-Channel Enhancement Mode Field Effect Transistor. It uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. The AO4413 is suitable for use as a load switch or in PWM applications.
Parametrics
AO4413 absolute maximum ratings: (1)Drain-Source Voltage: -30 V; (2)Gate-Source Voltage: ±25 V; (3)Continuous Drain Current: -15 A at TA=25 ℃, -12.8 A at TA=70 ℃; (4)Pulsed Drain Current: -80 A; (5)Power Dissipation: 3 W at TA=25 ℃, 2.1 W at TA=70 ℃; (6)Junction and Storage Temperature Range: -55 to 150 ℃.
Features
AO4413 features: (1)VDS (V) = -30V; (2)ID = -15A; (3)RDS(ON) < 7mΩ (VGS = -20V); (4)RDS(ON) < 8.5mΩ (VGS = -10V).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4413 |
MOSFET P CH 30V 15A SOIC 8 |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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