Product Summary

The 2SK2605 is a field effect transistor. It is designed for high speed, high voltage switching applications and switching regulator applications.

Parametrics

2SK2605 absolute maximum ratings: (1)drain-source voltage: 800 V; (2)drain-gate voltage (RGS=20kΩ): 800 V; (3)gate-source voltage: ±30 V; (4)drain current: 5 A; (5)drain power dissipation (TC=25℃): 45 W; (6)single pulse avalanche energy: 370 mJ; (7)avalanche current: 5 A; (8)repetitive avalanche energy: 4.5 mJ; (9)channel temperature: 150 ℃; (10)storage temperature range: -55 to 150 ℃.

Features

2SK2605 features: (1)low drain-source ON resistance: RDS(ON)=1.9Ω typ; (2)high forward transfer admittance: Yfs=3.8S typ; (3)low leakage current: IDSS=100μA max (VDS=640V); (4)enhancement-mode: Vth=2.0 to 4.0 V (VDS=10V, ID=1mA).

Diagrams

2SK2605 diagram

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2SK2605
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2SK2002-01MR
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2SK2003-01MR
2SK2003-01MR

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2SK2007
2SK2007

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2SK2008
2SK2008

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2SK2009
2SK2009

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2SK2010
2SK2010

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