(China (Mainland))
Product Summary
The 2SK2605 is a field effect transistor. It is designed for high speed, high voltage switching applications and switching regulator applications.
Parametrics
2SK2605 absolute maximum ratings: (1)drain-source voltage: 800 V; (2)drain-gate voltage (RGS=20kΩ): 800 V; (3)gate-source voltage: ±30 V; (4)drain current: 5 A; (5)drain power dissipation (TC=25℃): 45 W; (6)single pulse avalanche energy: 370 mJ; (7)avalanche current: 5 A; (8)repetitive avalanche energy: 4.5 mJ; (9)channel temperature: 150 ℃; (10)storage temperature range: -55 to 150 ℃.
Features
2SK2605 features: (1)low drain-source ON resistance: RDS(ON)=1.9Ω typ; (2)high forward transfer admittance: Yfs=3.8S typ; (3)low leakage current: IDSS=100μA max (VDS=640V); (4)enhancement-mode: Vth=2.0 to 4.0 V (VDS=10V, ID=1mA).
Diagrams
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 2SK2605 |
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Data Sheet |
Negotiable |
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2SK2002-01MR |
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Negotiable |
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2SK2003-01MR |
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Negotiable |
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2SK2007 |
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Negotiable |
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2SK2008 |
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Negotiable |
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2SK2009 |
Other |
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Negotiable |
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2SK2010 |
Other |
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Negotiable |
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