(China (Mainland))
Product Summary
The IRFP064N is a HEXFET power MOSFET international rectifier. Fifth Generation HEXFET IRFP064N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of the IRFP064N , combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET IRFP064N is well known for, provides the designer with an extremely efficient and reliable device of the IRFP064N for use in a wide variety of applications. The TO-247 package of the IRFP064N is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
Parametrics
IRFP064N absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 110; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 80A; (3)IDM Pulsed Drain Current: 390; (4)PD @TC = 25℃ Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)EAS Single Pulse Avalanche Energy: 480 mJ; (8)IAR Avalanche Current: 59 A; (9)EAR Repetitive Avalanche Energy: 20 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ Operating Junction and: -55 to + 175℃; (12)TSTG Storage Temperature Range: -55 to + 175℃.
Features
IRFP064N features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
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 IRFP064N |
International Rectifier |
MOSFET N-CH 55V 110A TO-247AC |
Data Sheet |
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IRFP064NPBF |
International Rectifier |
MOSFET MOSFT 55V 98A 8mOhm 113.3nCAC |
Data Sheet |
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