Product Summary
The IRFB4310 is a HEXFET Power MOSFET. The applications of the IRFB4310 include High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.
Parametrics
IRFB4310 absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V A: 140 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 97 A; (3)IDM Pulsed Drain Current: 550 A; (4)PD @TC = 25℃ Maximum Power Dissipation: 330 W; (5)Linear Derating Factor: 2.2 W/℃; (6)Gate-to-Source Voltage: ±20 V; (7)Peak Diode Recovery: 14 V/ns; (8)Operating Junction and Storage Temperature Range: -55 to +175 ℃.
Features
IRFB4310 features: (1)Worldwide Best RDS(on) in TO-220; (2)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche SOA; (4)Enhanced body diode dV/dt and dI/dt Capabilit.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFB4310 |
International Rectifier |
MOSFET N-CH 100V 140A TO-220AB |
Data Sheet |
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IRFB4310GPBF |
International Rectifier |
MOSFET MOSFT 100V 140A 7mOhm 170nC |
Data Sheet |
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IRFB4310ZPBF |
International Rectifier |
MOSFET MOSFT 100V 127A 6mOhm 120nC Qg |
Data Sheet |
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IRFB4310ZGPBF |
International Rectifier |
MOSFET MOSFT 100V 127A 6mOhm 120nC |
Data Sheet |
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IRFB4310PBF |
International Rectifier |
MOSFET MOSFT 100V 140A 7mOhm 170nC |
Data Sheet |
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IRFB4310Z |
Other |
Data Sheet |
Negotiable |
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